MBR2535CTL
http://onsemi.com
2
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
V
Average Rectified Forward Current
(TC
= 142
°C per Diode)
(TC
= 142
°C per Device)
IF(AV)
12.5
25
A
Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC
= 139
°C)
IFRM
25
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
?65 to +150
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy
Waval
20
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/RJA.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, Junction?to?Case
Min. Pad
RJC
2.0
°C/W
Maximum Thermal Resistance, Junction?to?Ambient
Min. Pad
RJA
75.0
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2)
(iF
= 25 Amps, T
j
= 25
°C)
(iF
= 12.5 Amps, Tj = 25
°C)
(iF
= 12.5 Amps, Tj = 125
°C)
vF
?
?
?
0.51
0.41
0.33
0.55
0.47
0.41
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
iR
?
?
0.8
300
5.0
500
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.